Despite Silicon's intrinsic advantages for spintronics, even the basic elements of spin transport had not been unambiguously achieved in this semiconductor until recently.[1] I will discuss the specific challenges associated with spin injection and detection in Silicon (Si), and our unique solution, employing ballistic hot-electron transport through nano-scale ferromagnetic metal spin "polarizers". Using this technique, we have observed unprecedented coherence in spin precession measurements, and extracted very long spin lifetimes of conduction electrons traveling over macroscopic distances.[2] Whereas transistor scaling limits will soon suppress progress in microelectronics using Si, spintronics may secure this semiconductor's dominance for the future.